As artificial intelligence (AI) continues to evolve, the need for high-performing semiconductors is becoming increasingly urgent. Innovations in materials and structures that enhance semiconductor performance are essential. A development in this area has emerged: the world’s first 4-inch heterostructure fabrication technology utilizing plasma-enhanced chemical vapor deposition (PECVD). This pioneering approach offers a pathway to produce low-power, high-performance semiconductors, significantly improving upon traditional silicon-based technologies.
The achievement is the result of collaborative research led by Senior Researcher Hyeong-U Kim from the Semiconductor Manufacturing Research Center at the Korea Institute of Machinery and Materials (KIMM), alongside Professor Taesung Kim and his team from Sungkyunkwan University. This milestone in semiconductor fabrication marks a significant leap forward, particularly in the context of AI applications, where efficiency and performance are paramount.
Using advanced PECVD techniques, the research team successfully fabricated two distinct types of 4-inch wafer-scale heterostructures. The first of these combines WS₂ and graphene, through a meticulous process that involves depositing a 1-nanometer tungsten layer before subjecting it to H₂S plasma sulfurization. The second breakthrough features a metal-semiconductor heterostructure made from two phases of molybdenum disulfide (MoS₂). The unique properties of the 1T phase, traditionally challenging to stabilize in large-area wafers, were effectively leveraged in this fabrication process, resulting in a successful implementation of a 1T-2H heterostructure.
Unlike traditional heterostructure methods that are limited to small sizes and often face reproducibility challenges, this innovative PECVD approach has enabled the production of scalable 4-inch wafers. Such advancements allow for the creation of 3D integrated structures that significantly lower power loss and heat dissipation, a critical factor in enhancing the performance and energy efficiency of AI semiconductors.
According to Hyeong-U Kim, “This newly developed technology not only meets wafer-size and reproducibility demands but also opens doors for experimental validations that were previously confined to academic settings. Utilizing PECVD, a standard in the semiconductor industry, positions this technology for potential mass production, which could greatly benefit the advancement and commercialization of AI semiconductor capabilities.”
KIMM has secured patents for this technology in both the United States and South Korea, underscoring its unique contributions to the field. The research has garnered attention in prestigious journals such as Advanced Materials and Energy & Environmental Materials, further highlighting its significance.
This pioneering work is supported by KIMM’s initiatives aimed at developing foundational plasma equipment technologies for the semiconductor and display industries, as well as other strategic programs by the Ministry of Trade, Industry, and Energy. The advances made through this research promise substantial contributions to the future of AI technologies and semiconductor performance.
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