2N6316 Central Semiconductor

2N6316 , Central Semiconductor

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Spécifications techniques du produit

Product Attribute	Attribute Value
Manufacturer	Central Semiconductor
Product Category	Bipolar Transistors - BJT
RoHS
Maximum DC Collector Current	15 A
Mounting Style	Through Hole
Pd - Power Dissipation	90 W
Product Type	BJTs - Bipolar Transistors
Package / Case	TO-66-2
Collector- Base Voltage VCBO	80 V
Collector- Emitter Voltage VCEO Max	80 V
Collector-Emitter Saturation Voltage	2 V
Emitter- Base Voltage VEBO	5 V
Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 200 C
Gain Bandwidth Product FT	4 MHz
Series	2N6316
Packaging	Tube
Part # Aliases	2N6316 PBFREE
Brand	Central Semiconductor
Configuration	Single
DC Collector/Base Gain Hfe Min	20 at 500 mA, 4 V
DC Current Gain HFE Max	100 at 2.5 A, 4 V
Transistor Polarity	NPN
Technology	Si
Factory Pack Quantity	30
Subcategory	Transistors
Unit Weight	0.206000 oz

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2N6316 , Central Semiconductor