Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Maximum DC Collector Current | 0.2 A |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 1 W |
| Product Type | BJTs - Bipolar Transistors |
| Package / Case | X2-DFN1006-3 |
| Collector- Base Voltage VCBO | 80 V |
| Collector- Emitter Voltage VCEO Max | 65 V |
| Collector-Emitter Saturation Voltage | 220 mV |
| Emitter- Base Voltage VEBO | 6 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product FT | 300 MHz |
| Series | BC846 |
| Packaging | Cut Tape or Reel |
| Brand | Diodes Incorporated |
| Configuration | Single |
| Continuous Collector Current | 0.2 A |
| DC Collector/Base Gain Hfe Min | 200 at 2 mA, 5 V |
| DC Current Gain HFE Max | 450 at 2 mA, 5 V |
| Transistor Polarity | NPN |
| Technology | Si |
| Factory Pack Quantity | 10000 |
| Subcategory | Transistors |
