Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 35 mOhms, 74 mOhms |
| Rise Time | 3 ns, 7.8 ns |
| Fall Time | 3.6 ns, 18 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 1.1 W |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | TSOT-26-6 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Packaging | Cut Tape or Reel |
| Brand | Diodes Incorporated |
| Configuration | Dual |
| Transistor Polarity | N-Channel, P-Channel |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Vgs - Gate-Source Voltage | 12 V |
| Vgs Th - Gate-Source Threshold Voltage | 400 mV, 1 V |
| Qg - Gate Charge | 3.6 nC, 5.9 nC |
| Technology | Si |
| Id - Continuous Drain Current | 4.6 A, 3.2 A |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Typical Turn-Off Delay Time | 12.5 ns, 31 ns |
| Typical Turn-On Delay Time | 2.6 ns, 3.2 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
