Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 55 mOhms, 110 mOhms |
| Rise Time | 7.4 ns, 4.6 ns |
| Fall Time | 15.6 ns, 2.2 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 1.3 W |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | TSOT-26-6 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | DMG6601 |
| Packaging | Cut Tape or Reel |
| Brand | Diodes Incorporated |
| Configuration | Dual |
| Transistor Polarity | N-Channel, P-Channel |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Vgs - Gate-Source Voltage | 10 V |
| Vgs Th - Gate-Source Threshold Voltage | 500 mV, 400 mV |
| Qg - Gate Charge | 12.3 nC, 13.8 nC |
| Technology | Si |
| Id - Continuous Drain Current | 3.8 A, 2.5 A |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Typical Turn-Off Delay Time | 31.2 ns, 18.3 ns |
| Typical Turn-On Delay Time | 1.6 ns, 1.7 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.000459 oz |
