Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Product Category | MOSFET |
| RoHS |
|
| Type | FET |
| Rds On - Drain-Source Resistance | 10 Ohms |
| Rise Time | 8 ns |
| Fall Time | 12 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 2 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | SOT-223-3 |
| Length | 6.7 mm |
| Width | 3.7 mm |
| Height | 1.65 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | ZVNL120 |
| Packaging | Cut Tape or Reel |
| Brand | Diodes Incorporated |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Technology | Si |
| Id - Continuous Drain Current | 320 mA |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Typical Turn-Off Delay Time | 20 ns |
| Typical Turn-On Delay Time | 8 ns |
| Factory Pack Quantity | 1000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.003951 oz |
