BAT15099RE6327HTSA1
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BAT15099RE6327HTSA1 , INFINEON

Fabricant: INFINEON
No de pièce du fabricant: BAT15099RE6327HTSA1
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This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-099R a suitable choice for mixer functions in applications which frequencies are as high as 12 GHz. For mixers in: • Satellite systems • Low noise blocks for Ku bands • Security systems
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  • Quantité Prix unitaire
  • 1+ $0.48091
  • 100+ $0.37226

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Product Attribute Attribute Value
Manufacturer Infineon
Package / Case *
Références croisées
17213452
73
/category/Others_73?proid=17213452&N=
$
1 0.48091
100 0.37226