Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon |
| Product Category | MOSFET |
| RoHS |
|
| Type | HEXFET Power MOSFET |
| Forward Transconductance - Min | 206 S |
| Rds On - Drain-Source Resistance | 9 mOhms |
| Rise Time | 12 ns |
| Fall Time | 8.6 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 250 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | PQFN-8 |
| Length | 6 mm |
| Width | 5 mm |
| Height | 0.83 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Packaging | Cut Tape or Reel |
| Part # Aliases | SP001560282 |
| Brand | Infineon / IR |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs Th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 65 nC |
| Technology | Si |
| Id - Continuous Drain Current | 100 A |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Typical Turn-Off Delay Time | 27 ns |
| Typical Turn-On Delay Time | 9 ns |
| Factory Pack Quantity | 4000 |
| Subcategory | MOSFETs |
