Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon |
| Product Category | MOSFET |
| RoHS |
|
| Type | HEXFET Power MOSFET |
| Rds On - Drain-Source Resistance | 26 mOhms |
| Rise Time | 90 ns |
| Fall Time | 66 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 110 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Length | 6.5 mm |
| Width | 6.22 mm |
| Height | 2.3 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Channel Mode | Enhancement |
| Packaging | Cut Tape or Reel |
| Part # Aliases | SP001556854 |
| Brand | Infineon / IR |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Qg - Gate Charge | 74 nC |
| Technology | Si |
| Id - Continuous Drain Current | 42 A |
| Vds - Drain-Source Breakdown Voltage | 75 V |
| Typical Turn-Off Delay Time | 65 ns |
| Typical Turn-On Delay Time | 16 ns |
| Factory Pack Quantity | 2000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.139332 oz |
