Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 200 mS |
| Rds On - Drain-Source Resistance | 1.6 Ohms |
| Rise Time | 3.3 ns |
| Fall Time | 3.1 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 500 mW (1/2 W) |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Length | 2.9 mm |
| Width | 1.3 mm |
| Height | 1.1 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Qualification | AEC-Q101 |
| Series | 2N7002 |
| Packaging | Cut Tape or Reel |
| Part # Aliases | 2N7002 2N72H6327XT H6327 SP000929182 |
| Brand | Infineon Technologies |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs Th - Gate-Source Threshold Voltage | 1.5 V |
| Qg - Gate Charge | 600 pC |
| Technology | Si |
| Id - Continuous Drain Current | 300 mA |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Typical Turn-Off Delay Time | 5.5 ns |
| Typical Turn-On Delay Time | 3 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.000282 oz |
