BSC028N06LS3 G
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BSC028N06LS3 G , Infineon Technologies

Fabricant: Infineon Technologies
No de pièce du fabricant: BSC028N06LS3 G
Paquet: TDSON-8
RoHS:
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MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3
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Spécifications techniques du produit
Product Attribute Attribute Value
Manufacturer Infineon
Product Category MOSFET
RoHS
Forward Transconductance - Min 60 S
Rds On - Drain-Source Resistance 2.3 mOhms
Rise Time 17 ns
Fall Time 19 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 139 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case TDSON-8
Length 5.9 mm
Width 5.15 mm
Height 1.27 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series OptiMOS 3
Packaging Cut Tape or Reel
Part # Aliases BSC028N06LS3GATMA1 BSC28N6LS3GXT SP000453652
Brand Infineon Technologies
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 20 V
Vgs Th - Gate-Source Threshold Voltage 1.2 V
Qg - Gate Charge 175 nC
Technology Si
Id - Continuous Drain Current 100 A
Vds - Drain-Source Breakdown Voltage 60 V
Typical Turn-Off Delay Time 77 ns
Typical Turn-On Delay Time 19 ns
Factory Pack Quantity 5000
Subcategory MOSFETs
Unit Weight 0.003527 oz
Tradename OptiMOS
Références croisées
804967
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=804967&N=
$
1 1.45035
10 1.26099
30 1.14282
100 1.02195
500 0.96687
1000 0.94410