Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 410 mS |
| Rds On - Drain-Source Resistance | 2.4 Ohms |
| Rise Time | 3.2 ns |
| Fall Time | 22 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 500 mW (1/2 W) |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Length | 2.9 mm |
| Width | 1.3 mm |
| Height | 1.1 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Qualification | AEC-Q101 |
| Series | BSS123 |
| Packaging | Cut Tape or Reel |
| Part # Aliases | BSS123NH6327XT BSS123NH6327XTSA1 SP000870646 |
| Brand | Infineon Technologies |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs Th - Gate-Source Threshold Voltage | 800 mV |
| Qg - Gate Charge | 900 pC |
| Technology | Si |
| Id - Continuous Drain Current | 190 mA |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Typical Turn-Off Delay Time | 7.4 ns |
| Typical Turn-On Delay Time | 2.3 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.000282 oz |
