PB80N06S4L07ATMA2
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PB80N06S4L07ATMA2 , Infineon Technologies

Fabricant: Infineon Technologies
No de pièce du fabricant: IPB80N06S4L07ATMA2
Paquet: TO-263-3
RoHS:
Fiche technique:

PDF For IPB80N06S4L07ATMA2

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MOSFET N-Ch 60V 80A D2PAK-2
Tips: the prices and stock are available, please place order directly.
  • Quantité Prix unitaire
  • 1+ $4.12587
  • 10+ $3.59955
  • 30+ $3.28806
  • 100+ $2.97126
  • 500+ $2.82627
  • 1000+ $2.76048

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$4.12587

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Spécifications techniques du produit
Product Attribute Attribute Value
Manufacturer Infineon
Product Category MOSFET
RoHS
Rds On - Drain-Source Resistance 6.4 mOhms
Mounting Style SMD/SMT
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case TO-263-3
Length 10 mm
Width 9.25 mm
Height 4.4 mm
Qualification AEC-Q101
Series IPB80N06S4L
Packaging Cut Tape or Reel
Part # Aliases IPB80N06S4L-07 IPB8N6S4L7XT SP001028674
Brand Infineon Technologies
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Technology Si
Id - Continuous Drain Current 80 A
Vds - Drain-Source Breakdown Voltage 60 V
Factory Pack Quantity 1000
Subcategory MOSFETs
Unit Weight 0.068654 oz
Références croisées
757251
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=757251&N=
$
1 4.12587
10 3.59955
30 3.28806
100 2.97126
500 2.82627
1000 2.76048