PD082N10N3G
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PD082N10N3G , Infineon Technologies

Fabricant: Infineon Technologies
No de pièce du fabricant: IPD082N10N3G
Paquet: TO-252-2(DPAK)
RoHS:
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PDF For IPD082N10N3G

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Description:
MOSFET N Trench 100V 80A 3.5V @ 75uA 8.6 mΩ @ 73A,10V TO-252-2(DPAK) RoHS
Tips: the prices and stock are available, please place order directly.
  • Quantité Prix unitaire
  • 1+ $1.54431
  • 10+ $1.34289
  • 30+ $1.21527
  • 100+ $0.97893
  • 500+ $0.91989
  • 1000+ $0.89433

In Stock: 165

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$1.54431

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Spécifications techniques du produit
Product Attribute Attribute Value
Manufacturer Infineon Technologies
Continuous Drain Current (Id) @ 25°C 80A
Power Dissipation-Max (Ta=25°C) 125W
Rds On - Drain-Source Resistance 8.6mΩ @ 73A,10V
Package / Case TO-252-2(DPAK)
Packaging Tape & Reel (TR)
Transistor Polarity N Channel
Vgs - Gate-Source Voltage 3.5V @ 75uA
Vds - Drain-Source Breakdown Voltage 100V
Références croisées
4595788
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4595788&N=
$
1 1.54431
10 1.34289
30 1.21527
100 0.97893
500 0.91989
1000 0.89433