PD30N06S2L-23
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PD30N06S2L-23 , Infineon Technologies

Fabricant: Infineon Technologies
No de pièce du fabricant: IPD30N06S2L-23
Paquet: PG-TO252-3
RoHS:
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PDF For IPD30N06S2L-23

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Description:
MOSFET N Trench 55V 30A(Tc) 2V @ 50uA 23 mΩ @ 22A,10V PG-TO252-3 RoHS
Tips: the prices and stock are available, please place order directly.
  • Quantité Prix unitaire
  • 1+ $0.82188
  • 10+ $0.69696
  • 30+ $0.62847
  • 100+ $0.55062
  • 500+ $0.51570
  • 1000+ $0.50094

In Stock: 100

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Quantité Le minimum 1
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Total

$0.82188

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Spécifications techniques du produit
Product Attribute Attribute Value
Manufacturer Infineon Technologies
Continuous Drain Current (Id) @ 25°C 30A(Tc)
Power Dissipation-Max (Ta=25°C) 100W(Tc)
Rds On - Drain-Source Resistance 23mΩ @ 22A,10V
Package / Case PG-TO252-3
Packaging Tape & Reel (TR)
Transistor Polarity N Channel
Vgs - Gate-Source Voltage 2V @ 50uA
Vds - Drain-Source Breakdown Voltage 55V
Références croisées
4692188
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4692188&N=
$
1 0.82188
10 0.69696
30 0.62847
100 0.55062
500 0.51570
1000 0.50094