PP024N06N3 G
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PP024N06N3 G , Infineon Technologies

Fabricant: Infineon Technologies
No de pièce du fabricant: IPP024N06N3 G
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MOSFET N Channel 60V 120A(Tc) 4V @ 196uA 2.4mΩ @ 100A,10V PG-TO220-3 RoHS
Tips: the prices and stock are available, please place order directly.
  • Quantité Prix unitaire
  • 1+ $2.96235
  • 10+ $2.59983
  • 50+ $2.38356
  • 100+ $2.16603
  • 500+ $2.06532
  • 1000+ $2.01969

In Stock: 121

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$2.96235

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Spécifications techniques du produit
Product Attribute Attribute Value
Continuous Drain Current (Id) @ 25°C 120A(Tc)
Power Dissipation-Max (Ta=25°C) 250W(Tc)
Rds On - Drain-Source Resistance 2.4mΩ @ 100A,10V
Transistor Polarity N Channel
Vgs - Gate-Source Voltage 4V @ 196uA
Vds - Drain-Source Breakdown Voltage 60V
Références croisées
5092297
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=5092297&N=
$
1 2.96235
10 2.59983
50 2.38356
100 2.16603
500 2.06532
1000 2.01969