Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 190 mOhms |
| Rise Time | 8.5 ns |
| Fall Time | 7.5 ns |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 152 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | PG-TO-220-3 |
| Length | 10 mm |
| Width | 4.4 mm |
| Height | 15.65 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | CoolMOS CE |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 13 V |
| Vgs Th - Gate-Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 47.2 nC |
| Technology | Si |
| Id - Continuous Drain Current | 24.8 A |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Typical Turn-Off Delay Time | 54 ns |
| Typical Turn-On Delay Time | 9.5 ns |
| Factory Pack Quantity | 500 |
| Subcategory | MOSFETs |
| Tradename | CoolMOS |
