RFHM8235TRPBF
Payment:
Delivery:

IRFHM8235TRPBF , Infineon Technologies

Fabricant: Infineon Technologies
No de pièce du fabricant: IRFHM8235TRPBF
Paquet: PQFN-8
RoHS:
Fiche technique:

PDF For IRFHM8235TRPBF

ECAD:
Description:
MOSFET 25V 7.3nC SGL N-CH HEXFET Pwr MOSFET
Demande de devis In Stock: 4
Conseils chaleureux: veuillez remplir le formulaire ci-dessous et nous vous contacterons dans les plus brefs délais.
*Quantité:
*Votre Nom:
*Adresse e-mail:
Téléphone:
Prix ​​cible:
Remarque:
envoyer une demande
  • Product Details
  • Shopping Guide
  • FAQs
Spécifications techniques du produit
Product Attribute Attribute Value
Manufacturer Infineon
Product Category MOSFET
RoHS
Forward Transconductance - Min 43 S
Rds On - Drain-Source Resistance 10.3 mOhms
Rise Time 16 ns
Fall Time 5.2 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 3 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case PQFN-8
Length 3.3 mm
Width 3.3 mm
Height 0.9 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series IRFHM8235
Packaging Cut Tape or Reel
Part # Aliases SP001556558
Brand Infineon Technologies
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 20 V
Vgs Th - Gate-Source Threshold Voltage 1.8 V
Qg - Gate Charge 7.7 nC
Technology Si
Id - Continuous Drain Current 16 A
Vds - Drain-Source Breakdown Voltage 25 V
Typical Turn-Off Delay Time 7.5 ns
Typical Turn-On Delay Time 7.9 ns
Factory Pack Quantity 4000
Subcategory MOSFETs
Tradename SmallPowIR
Références croisées
801791
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=801791&N=
$