P2309LT1G
Payment:
Delivery:

P2309LT1G , Leshan Radio

Fabricant: Leshan Radio
No de pièce du fabricant: LP2309LT1G
Paquet:
RoHS:
Fiche technique:

PDF For LP2309LT1G

ECAD:
Description:
MOSFET P Trench 60V 1.9A 3V @ 250uA 215 mΩ @ 1.8A,10V SOT-23(TO-236) RoHS
Tips: the prices and stock are available, please place order directly.
  • Quantité Prix unitaire
  • 1+ $0.02895

In Stock: 9028

Ship Immediately
Quantité Le minimum 1
ACHETER
Total

$0.02895

  • Product Details
  • Shopping Guide
  • FAQs
Spécifications techniques du produit
Product Attribute Attribute Value
Manufacturer Leshan Radio
Continuous Drain Current (Id) @ 25°C 1.9A
Power Dissipation-Max (Ta=25°C) 1.4W
Rds On - Drain-Source Resistance 215mΩ @ 1.8A,10V
Transistor Polarity P Channel
Vgs - Gate-Source Voltage 3V @ 250uA
Vds - Drain-Source Breakdown Voltage 60V
Références croisées
4690804
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4690804&N=
$
1 0.02895