Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Nexperia |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Maximum DC Collector Current | 0.1 A |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 200 mW |
| Product Type | BJTs - Bipolar Transistors |
| Package / Case | SOT-323-3 |
| Collector- Base Voltage VCBO | 50 V |
| Collector- Emitter Voltage VCEO Max | 45 V |
| Emitter- Base Voltage VEBO | 5 V |
| Length | 2.2 mm |
| Width | 1.35 mm |
| Height | 1 mm |
| Minimum Operating Temperature | - 65 C |
| Maximum Operating Temperature | + 150 C |
| Qualification | AEC-Q101 |
| Gain Bandwidth Product FT | 100 MHz |
| Packaging | Cut Tape or Reel |
| Part # Aliases | /T3 BC857W |
| Brand | Nexperia |
| Configuration | Single |
| DC Collector/Base Gain Hfe Min | 125 |
| DC Current Gain HFE Max | 125 at 2 mA, 5 V |
| Transistor Polarity | PNP |
| Factory Pack Quantity | 10000 |
| Subcategory | Transistors |
| Unit Weight | 0.000176 oz |
