Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Nexperia |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Maximum DC Collector Current | 2 A |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 500 mW |
| Product Type | BJTs - Bipolar Transistors |
| Package / Case | SOT-89-3 |
| Collector- Base Voltage VCBO | 100 V |
| Collector- Emitter Voltage VCEO Max | 80 V |
| Emitter- Base Voltage VEBO | 5 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Qualification | AEC-Q101 |
| Gain Bandwidth Product FT | 180 MHz |
| Packaging | Cut Tape or Reel |
| Brand | Nexperia |
| Configuration | Single |
| Continuous Collector Current | 1 A |
| DC Collector/Base Gain Hfe Min | 63 at 150 mA, 2 V |
| DC Current Gain HFE Max | 250 at 150 mA, 2 V |
| Transistor Polarity | NPN |
| Technology | Si |
| Factory Pack Quantity | 4000 |
| Subcategory | Transistors |
