Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Nexperia |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Maximum DC Collector Current | 200 mA |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 250 mW |
| Product Type | BJTs - Bipolar Transistors |
| Package / Case | TO-236AB-3 |
| Collector- Base Voltage VCBO | 300 V |
| Collector- Emitter Voltage VCEO Max | 300 V |
| Emitter- Base Voltage VEBO | 6 V |
| Length | 3 mm (Max) |
| Width | 1.4 mm (Max) |
| Height | 1 mm (Max) |
| Minimum Operating Temperature | - 65 C |
| Maximum Operating Temperature | + 150 C |
| Qualification | AEC-Q101 |
| Gain Bandwidth Product FT | 50 MHz |
| Packaging | Cut Tape or Reel |
| Part # Aliases | PMBTA42 T/R |
| Brand | Nexperia |
| Configuration | Single |
| Continuous Collector Current | 100 mA |
| DC Collector/Base Gain Hfe Min | 25 |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 3000 |
| Subcategory | Transistors |
| Unit Weight | 0.000282 oz |
