Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Nexperia |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 1.6 S |
| Rds On - Drain-Source Resistance | 380 mOhms |
| Rise Time | 4 ns |
| Fall Time | 31 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 390 mW |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | SOT-666-6 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Qualification | AEC-Q101 |
| Packaging | Cut Tape or Reel |
| Brand | Nexperia |
| Configuration | Dual |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Vgs - Gate-Source Voltage | 4.5 V |
| Vgs Th - Gate-Source Threshold Voltage | 500 mV |
| Qg - Gate Charge | 0.45 nC |
| Technology | Si |
| Id - Continuous Drain Current | 800 mA |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Typical Turn-Off Delay Time | 86 ns |
| Typical Turn-On Delay Time | 6 ns |
| Factory Pack Quantity | 4000 |
| Subcategory | MOSFETs |
