Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Nexperia |
| Product Category | MOSFET |
| RoHS |
|
| Type | Trench MOSFET |
| Product | MOSFET |
| Forward Transconductance - Min | 1.4 S |
| Rds On - Drain-Source Resistance | 940 mOhms |
| Rise Time | 5 ns |
| Fall Time | 9 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 360 mW |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | DFN-1006-3 |
| Length | 1.02 mm |
| Width | 0.62 mm |
| Height | 0.5 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Packaging | Cut Tape or Reel |
| Brand | Nexperia |
| Configuration | Single |
| Transistor Polarity | P-Channel |
| Vgs - Gate-Source Voltage | 8 V |
| Vgs Th - Gate-Source Threshold Voltage | 450 mV |
| Qg - Gate Charge | 1.3 nC |
| Technology | Si |
| Id - Continuous Drain Current | 1.4 A |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Typical Turn-Off Delay Time | 26 ns |
| Typical Turn-On Delay Time | 4 ns |
| Factory Pack Quantity | 10000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.000028 oz |
