Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Maximum DC Collector Current | 0.6 A |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 625 mW |
| Product Type | BJTs - Bipolar Transistors |
| Package / Case | TO-92-3 |
| Collector- Base Voltage VCBO | 60 V |
| Collector- Emitter Voltage VCEO Max | 40 V |
| Collector-Emitter Saturation Voltage | 0.75 V |
| Emitter- Base Voltage VEBO | 6 V |
| Length | 4.7 mm |
| Width | 3.93 mm |
| Height | 4.7 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product FT | 250 MHz |
| Series | 2N4401 |
| Packaging | Bulk |
| Brand | ON Semiconductor / Fairchild |
| Configuration | Single |
| Continuous Collector Current | 0.6 A |
| DC Current Gain HFE Max | 300 |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 10000 |
| Subcategory | Transistors |
| Unit Weight | 0.006349 oz |
