Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Maximum DC Collector Current | 7 A |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 40 W |
| Product Type | BJTs - Bipolar Transistors |
| Package / Case | TO-220-3 |
| Collector- Base Voltage VCBO | - 100 V |
| Collector- Emitter Voltage VCEO Max | - 100 V |
| Collector-Emitter Saturation Voltage | - 0.6 V |
| Emitter- Base Voltage VEBO | - 7 V |
| Length | 10.1 mm |
| Width | 4.7 mm |
| Height | 9.4 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Series | KSA1010 |
| Packaging | Tube |
| Part # Aliases | KSA1010YTU_NL |
| Brand | ON Semiconductor / Fairchild |
| Configuration | Single |
| Continuous Collector Current | - 7 A |
| DC Collector/Base Gain Hfe Min | 40 |
| DC Current Gain HFE Max | 200 |
| Transistor Polarity | PNP |
| Factory Pack Quantity | 1000 |
| Subcategory | Transistors |
| Unit Weight | 0.063493 oz |
