Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Maximum DC Collector Current | 3 A |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 1.56 W |
| Product Type | BJTs - Bipolar Transistors |
| Package / Case | TO-252-3 |
| Collector- Base Voltage VCBO | 100 V |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Collector-Emitter Saturation Voltage | 1.2 V |
| Emitter- Base Voltage VEBO | 5 V |
| Length | 6.73 mm |
| Width | 6.22 mm |
| Height | 2.38 mm |
| Minimum Operating Temperature | - 65 C |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product FT | 3 MHz |
| Series | MJD32C |
| Packaging | Cut Tape or Reel |
| Brand | ON Semiconductor / Fairchild |
| Configuration | Single |
| Continuous Collector Current | 3 A |
| DC Collector/Base Gain Hfe Min | 25 |
| Transistor Polarity | PNP |
| Factory Pack Quantity | 2500 |
| Subcategory | Transistors |
| Unit Weight | 0.035274 oz |
