Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | MOSFET |
| RoHS |
|
| Type | MOSFET |
| Product | MOSFET Small Signal |
| Rds On - Drain-Source Resistance | 85 mOhms |
| Rise Time | 32 ns |
| Fall Time | 32 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 500 mW (1/2 W) |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | SSOT-3 |
| Length | 2.9 mm |
| Width | 1.4 mm |
| Height | 1.12 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | NDS355AN |
| Packaging | Cut Tape or Reel |
| Part # Aliases | NDS355AN_NL |
| Brand | ON Semiconductor / Fairchild |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Technology | Si |
| Id - Continuous Drain Current | 1.7 A |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Typical Turn-Off Delay Time | 13 ns |
| Typical Turn-On Delay Time | 10 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.001058 oz |
