Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | MOSFET |
| RoHS |
|
| Product | MOSFET Small Signal |
| Forward Transconductance - Min | 0.1 S |
| Rds On - Drain-Source Resistance | 1.2 Ohms |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 400 mW |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-92-3 |
| Length | 5.2 mm |
| Width | 4.19 mm |
| Height | 5.33 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | 2N7000 |
| Packaging | Cut Tape or Reel |
| Part # Aliases | 2N7000_D26Z |
| Brand | ON Semiconductor |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Technology | Si |
| Id - Continuous Drain Current | 200 mA |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Factory Pack Quantity | 2000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.007090 oz |
