BC847BPDW1T2G ON Semiconductor

BC847BPDW1T2G , ON Semiconductor

Fabricant:	ON Semiconductor
No de pièce du fabricant:	BC847BPDW1T2G
Paquet:	SOT-363-6
RoHS:
Fiche technique:	PDF For BC847BPDW1T2G
ECAD:
Description:	Bipolar Transistors - BJT 45V 100mA DUAL

Demande de devis In Stock: 457236

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Spécifications techniques du produit

Product Attribute	Attribute Value
Manufacturer	ON Semiconductor
Product Category	Bipolar Transistors - BJT
RoHS
Maximum DC Collector Current	0.1 A
Mounting Style	SMD/SMT
Pd - Power Dissipation	380 mW
Product Type	BJTs - Bipolar Transistors
Package / Case	SOT-363-6
Collector- Base Voltage VCBO	50 V
Collector- Emitter Voltage VCEO Max	45 V
Collector-Emitter Saturation Voltage	0.6 V, - 0.65 V
Emitter- Base Voltage VEBO	6 V, - 5 V
Length	2 mm
Width	1.25 mm
Height	0.9 mm
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Gain Bandwidth Product FT	100 MHz
Series	BC847BP
Packaging	Cut Tape or Reel
Brand	ON Semiconductor
Configuration	Dual
Continuous Collector Current	0.1 A
DC Collector/Base Gain Hfe Min	200
DC Current Gain HFE Max	475
Transistor Polarity	NPN, PNP
Factory Pack Quantity	3000
Subcategory	Transistors
Unit Weight	0.000265 oz

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BC847BPDW1T2G , ON Semiconductor