MJ11012G ON Semiconductor | chipspulse.com

MJ11012G , ON Semiconductor

Fabricant:	ON Semiconductor
No de pièce du fabricant:	MJ11012G
Paquet:	TO-204-2 (TO-3)
RoHS:
Fiche technique:	PDF For MJ11012G
ECAD:
Description:	Darlington Transistors 30A 60V Bipolar Power NPN

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Spécifications techniques du produit

Product Attribute	Attribute Value
Manufacturer	ON Semiconductor
Product Category	Darlington Transistors
RoHS
Maximum DC Collector Current	30 A
Mounting Style	Through Hole
Pd - Power Dissipation	200 W
Product Type	Darlington Transistors
Package / Case	TO-204-2 (TO-3)
Collector- Base Voltage VCBO	60 V
Collector- Emitter Voltage VCEO Max	60 V
Emitter- Base Voltage VEBO	5 V
Length	39.37 mm
Width	26.67 mm
Height	8.51 mm
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Series	MJ11012
Packaging	Tray
Brand	ON Semiconductor
Configuration	Single
Continuous Collector Current	30 A
DC Collector/Base Gain Hfe Min	200, 1000
Transistor Polarity	NPN
Factory Pack Quantity	100
Subcategory	Transistors
Unit Weight	0.056438 oz

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MJ11012G , ON Semiconductor