Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Maximum DC Collector Current | 15 A |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 150000 mW |
| Product Type | BJTs - Bipolar Transistors |
| Package / Case | TO-3P-3 |
| Collector- Base Voltage VCBO | 250 V |
| Collector- Emitter Voltage VCEO Max | 250 V |
| Collector-Emitter Saturation Voltage | 1 V |
| Emitter- Base Voltage VEBO | 5 V |
| Length | 15.6 mm |
| Width | 4.8 mm |
| Height | 18.7 mm |
| Minimum Operating Temperature | - 65 C |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product FT | 30 MHz |
| Series | NJW0302 |
| Packaging | Tube |
| Brand | ON Semiconductor |
| Configuration | Single |
| DC Collector/Base Gain Hfe Min | 75 |
| DC Current Gain HFE Max | 75 |
| Transistor Polarity | PNP |
| Factory Pack Quantity | 30 |
| Subcategory | Transistors |
| Unit Weight | 0.238311 oz |
