Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | MOSFET |
| RoHS |
|
| Product | MOSFET Small Signal |
| Rds On - Drain-Source Resistance | 106 mOhms |
| Rise Time | 13.2 ns, 15 ns |
| Fall Time | 13.2 ns, 15 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 1.5 W |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | WDFN-6 |
| Length | 2 mm |
| Width | 2 mm |
| Height | 0.75 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | NTLJD3115P |
| Packaging | Cut Tape or Reel |
| Brand | ON Semiconductor |
| Configuration | Dual |
| Transistor Polarity | P-Channel |
| Transistor Type | 2 P-Channel |
| Vgs - Gate-Source Voltage | 8 V |
| Technology | Si |
| Id - Continuous Drain Current | 3.3 A |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Typical Turn-Off Delay Time | 13.7 ns, 19.8 ns |
| Typical Turn-On Delay Time | 5.2 ns, 5.5 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.000310 oz |
