Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 30 S, 30 S |
| Rds On - Drain-Source Resistance | 9.2 mOhms, 9.2 mOhms |
| Rise Time | 55 ns, 55 ns |
| Fall Time | 36 ns, 36 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 24 W |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | DFN-8 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Channel Mode | Enhancement |
| Qualification | AEC-Q101 |
| Series | NVMFD5C470NL |
| Packaging | Cut Tape or Reel |
| Brand | ON Semiconductor |
| Configuration | Dual |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs Th - Gate-Source Threshold Voltage | 1.2 V |
| Qg - Gate Charge | 9 nC, 9 nC |
| Technology | Si |
| Id - Continuous Drain Current | 36 A |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Typical Turn-Off Delay Time | 20 ns, 20 ns |
| Typical Turn-On Delay Time | 9.3 ns, 9.3 ns |
| Factory Pack Quantity | 1500 |
| Subcategory | MOSFETs |
