VMFS6H801NWFT1G
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NVMFS6H801NWFT1G , ON Semiconductor

Fabricant: ON Semiconductor
No de pièce du fabricant: NVMFS6H801NWFT1G
Paquet: SO-8FL
RoHS:
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PDF For NVMFS6H801NWFT1G

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Description:
MOSFET TRENCH 8 80V NFET
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Spécifications techniques du produit
Product Attribute Attribute Value
Manufacturer ON Semiconductor
Product Category MOSFET
RoHS
Forward Transconductance - Min 128 S
Rds On - Drain-Source Resistance 2.8 mOhms
Rise Time 74 ns
Fall Time 19 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 166 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case SO-8FL
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Channel Mode Enhancement
Qualification AEC-Q101
Packaging Cut Tape or Reel
Brand ON Semiconductor
Configuration Single
Transistor Polarity N-Channel
Vgs - Gate-Source Voltage 20 V
Vgs Th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 64 nC
Technology Si
Id - Continuous Drain Current 157 A
Vds - Drain-Source Breakdown Voltage 80 V
Typical Turn-Off Delay Time 70 ns
Typical Turn-On Delay Time 25 ns
Factory Pack Quantity 1500
Subcategory MOSFETs
Références croisées
816193
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=816193&N=
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