Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 2.6 S, 3.9 S |
| Rds On - Drain-Source Resistance | 116 mOhms, 194 mOhms |
| Rise Time | 7.5 ns, 9.8 ns |
| Fall Time | 22 ns, 36 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 900 mW |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | VEC-8 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | VEC2616 |
| Packaging | Cut Tape or Reel |
| Brand | ON Semiconductor |
| Configuration | Dual |
| Transistor Polarity | N-Channel, P-Channel |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs Th - Gate-Source Threshold Voltage | 1.2 V, 2.6 V |
| Qg - Gate Charge | 10 nC, 11 nC |
| Technology | Si |
| Id - Continuous Drain Current | 3 A, 2.5 A |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Typical Turn-Off Delay Time | 41 ns, 65 ns |
| Typical Turn-On Delay Time | 7.3 ns, 6.4 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
