6006ANX
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R6006ANX , ROHM Semiconductor

Fabricant: ROHM Semiconductor
No de pièce du fabricant: R6006ANX
Paquet: TO-220FP-3
RoHS:
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PDF For R6006ANX

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Description:
MOSFET 10V DRIVE NCH MOSFET
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Spécifications techniques du produit
Product Attribute Attribute Value
Manufacturer ROHM Semiconductor
Product Category MOSFET
RoHS
Forward Transconductance - Min 1.7 S
Rds On - Drain-Source Resistance 1.2 Ohms
Rise Time 18 ns
Fall Time 35 ns
Mounting Style Through Hole
Pd - Power Dissipation 40 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case TO-220FP-3
Packaging Bulk
Part # Aliases R6006ANX
Brand ROHM Semiconductor
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 30 V
Qg - Gate Charge 15 nC
Technology Si
Id - Continuous Drain Current 6 A
Vds - Drain-Source Breakdown Voltage 600 V
Typical Turn-Off Delay Time 50 ns
Typical Turn-On Delay Time 22 ns
Factory Pack Quantity 500
Subcategory MOSFETs
Unit Weight 0.211644 oz
Références croisées
797395
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=797395&N=
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