GW80TS65GC11
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GW80TS65GC11 , ROHM Semiconductor

Fabricant: ROHM Semiconductor
No de pièce du fabricant: RGW80TS65GC11
Paquet: TO-247N-3
RoHS:
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Description:
IGBT Transistors 650V 40A TO-247N Field Stp Trnch IGBT
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Spécifications techniques du produit
Product Attribute Attribute Value
Manufacturer ROHM Semiconductor
Product Category IGBT Transistors
RoHS
Maximum Gate Emitter Voltage 30 V
Mounting Style Through Hole
Pd - Power Dissipation 214 W
Product Type IGBT Transistors
Package / Case TO-247N-3
Collector- Emitter Voltage VCEO Max 650 V
Collector-Emitter Saturation Voltage 1.5 V
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 175 C
Packaging Tube
Brand ROHM Semiconductor
Configuration Single
Continuous Collector Current At 25 C 78 A
Continuous Collector Current Ic Max 78 A
Gate-Emitter Leakage Current 200 nA
Technology Si
Subcategory IGBTs
Références croisées
718852
1156
/category/Semiconductors/Discrete-Semiconductors/Transistors/IGBT-Transistors_1156?proid=718852&N=
$
1 6.06892
10 3.33836
50 3.00340
100 2.35564
500 2.31430
1000 2.30741