Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Product Category | MOSFET |
| RoHS |
|
| Type | MDmesh II Power MOSFET |
| Rds On - Drain-Source Resistance | 900 mOhms |
| Rise Time | 9 ns |
| Fall Time | 32 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 90 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-263-3 |
| Maximum Operating Temperature | + 150 C |
| Series | STB14NM50N |
| Packaging | Cut Tape or Reel |
| Brand | STMicroelectronics |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 2 V |
| Vgs Th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 42 nC |
| Technology | Si |
| Id - Continuous Drain Current | 12 A |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Typical Turn-Off Delay Time | 12 ns |
| Typical Turn-On Delay Time | 15 ns |
| Factory Pack Quantity | 1000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.139332 oz |
| Tradename | MDmesh |
