Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 190 mOhms |
| Rise Time | 7.5 ns |
| Fall Time | 7.5 ns |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 130 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Series | STP20N65M5 |
| Packaging | Tube |
| Brand | STMicroelectronics |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 25 V |
| Vgs Th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 36 nC |
| Technology | Si |
| Id - Continuous Drain Current | 18 A |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Factory Pack Quantity | 1000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.011640 oz |
| Tradename | MDmesh |
