Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 40 S, 89 S |
| Rds On - Drain-Source Resistance | 16.3 mOhms, 7.6 mOhms |
| Rise Time | 19.3 ns, 16.3 ns |
| Fall Time | 3 ns, 2.9 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 4 W |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | PTAB-5 |
| Length | 3 mm |
| Width | 2.5 mm |
| Height | 0.48 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | CSD87381P |
| Packaging | Cut Tape or Reel |
| Brand | Texas Instruments |
| Configuration | Dual |
| Development Kit | CSD87381PEVM-603 |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Vgs - Gate-Source Voltage | 8 V |
| Vgs Th - Gate-Source Threshold Voltage | 1.1 V, 1 V |
| Qg - Gate Charge | 3.9 nC, 8.9 nC |
| Technology | Si |
| Id - Continuous Drain Current | 8 A |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Typical Turn-Off Delay Time | 10.6 ns, 16.8 ns |
| Typical Turn-On Delay Time | 6.7 ns, 7.9 ns |
| Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs |
| Tradename | NexFET |
