Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Toshiba |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 4.5 S |
| Rds On - Drain-Source Resistance | 88.4 mOhms |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 1 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | SOT-23F-3 |
| Length | 2.9 mm |
| Width | 1.3 mm |
| Height | 0.9 mm |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | SSM3J328 |
| Packaging | Cut Tape or Reel |
| Brand | Toshiba |
| Configuration | Single |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Vgs - Gate-Source Voltage | 1.5 V |
| Vgs Th - Gate-Source Threshold Voltage | 300 mV |
| Qg - Gate Charge | 12.8 nC |
| Technology | Si |
| Id - Continuous Drain Current | 6 A |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Typical Turn-Off Delay Time | 107 ns |
| Typical Turn-On Delay Time | 32 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.001164 oz |
| Tradename | U-MOSVI |
