SI1308EDL-T1-GE3
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SI1308EDL-T1-GE3 , Vishay Intertech

Fabricant: Vishay Intertech
No de pièce du fabricant: SI1308EDL-T1-GE3
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PDF For SI1308EDL-T1-GE3

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Description:
MOSFET N Channel 30V 1.4A 1.5V @ 250uA 132mΩ @ 1.4A,10V SOT-323 RoHS
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  • Quantité Prix unitaire
  • 5+ $0.09729
  • 50+ $0.07947
  • 150+ $0.07047
  • 500+ $0.06381
  • 3000+ $0.05103
  • 6000+ $0.04833

In Stock: 7560

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Quantité Le minimum 5
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Total

$0.48645

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Spécifications techniques du produit
Product Attribute Attribute Value
Continuous Drain Current (Id) @ 25°C 1.4A
Power Dissipation-Max (Ta=25°C) 400mW
Rds On - Drain-Source Resistance 132mΩ @ 1.4A,10V
Transistor Polarity N Channel
Vgs - Gate-Source Voltage 1.5V @ 250uA
Vds - Drain-Source Breakdown Voltage 30V
Références croisées
5134885
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=5134885&N=
$
5 0.09729
50 0.07947
150 0.07047
500 0.06381
3000 0.05103
6000 0.04833