SI2337DS-T1-GE3
Payment:
Delivery:

SI2337DS-T1-GE3 , Vishay Intertech

Fabricant: Vishay Intertech
No de pièce du fabricant: SI2337DS-T1-GE3
Paquet: SOT-23(SOT-23-3)
RoHS:
Fiche technique:

PDF For SI2337DS-T1-GE3

ECAD:
Description:
MOSFET P Trench 80V 2.2A 4V @ 250uA 270 mΩ @ 1.2A,10V SOT-23(SOT-23-3) RoHS
Tips: the prices and stock are available, please place order directly.
  • Quantité Prix unitaire
  • 1+ $0.51606
  • 10+ $0.42921
  • 30+ $0.38439
  • 100+ $0.34101
  • 500+ $0.28701
  • 1000+ $0.27387

In Stock: 5975

Ship Immediately
Quantité Le minimum 1
ACHETER
Total

$0.51606

  • Product Details
  • Shopping Guide
  • FAQs
Spécifications techniques du produit
Product Attribute Attribute Value
Manufacturer Vishay Intertech
Continuous Drain Current (Id) @ 25°C 2.2A
Power Dissipation-Max (Ta=25°C) 760mW
Rds On - Drain-Source Resistance 270mΩ @ 1.2A,10V
Package / Case SOT-23(SOT-23-3)
Packaging Tape & Reel (TR)
Transistor Polarity P Channel
Vgs - Gate-Source Voltage 4V @ 250uA
Vds - Drain-Source Breakdown Voltage 80V
Références croisées
4594608
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4594608&N=
$
1 0.51606
10 0.42921
30 0.38439
100 0.34101
500 0.28701
1000 0.27387