Si2302CDS-T1-GE3
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Si2302CDS-T1-GE3 , Vishay Intertech

Fabricant: Vishay Intertech
No de pièce du fabricant: Si2302CDS-T1-GE3
Paquet: SOT23-3
RoHS:
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PDF For Si2302CDS-T1-GE3

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Description:
MOSFET N Trench 20V 2.9A 850mV @ 250uA 57 mΩ @ 3.6A,4.5V SOT-23(SOT-23-3) RoHS
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  • Quantité Prix unitaire
  • 20+ $0.05093
  • 200+ $0.04768
  • 500+ $0.04444
  • 1000+ $0.04120
  • 3000+ $0.03957
  • 6000+ $0.03730

In Stock: 8624

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$1.0186

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Spécifications techniques du produit
Product Attribute Attribute Value
Manufacturer Vishay Intertech
Continuous Drain Current (Id) @ 25°C 2.9A
Power Dissipation-Max (Ta=25°C) 710mW
Rds On - Drain-Source Resistance 57mΩ @ 3.6A,4.5V
Package / Case SOT23-3
Packaging Tape & Reel (TR)
Transistor Polarity N Channel
Vgs - Gate-Source Voltage 850mV @ 250uA
Vds - Drain-Source Breakdown Voltage 20V
Références croisées
4581789
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4581789&N=
$
20 0.05093
200 0.04768
500 0.04444
1000 0.04120
3000 0.03957
6000 0.03730