-GP300TD60
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VS-GP300TD60S , Vishay Semiconductors

Fabricant: Vishay Semiconductors
No de pièce du fabricant: VS-GP300TD60S
Paquet: DIAP
RoHS:
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PDF For VS-GP300TD60S

Description:
IGBT Transistors Ic 300A Vce(On)1.30V Half Brdge Trench PT
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Spécifications techniques du produit
Product Attribute Attribute Value
Manufacturer Vishay
Product Category IGBT Transistors
RoHS
Maximum Gate Emitter Voltage 20 V
Mounting Style Chassis Mount
Pd - Power Dissipation 1.136 kW
Product Type IGBT Transistors
Package / Case DIAP
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage -
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Brand Vishay Semiconductors
Configuration Dual
Continuous Collector Current At 25 C 580 A
Continuous Collector Current Ic Max 580 A
Gate-Emitter Leakage Current +/- 500 nA
Technology Si
Factory Pack Quantity 12
Subcategory IGBTs
Références croisées
724282
1156
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