Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Vishay |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 3.7 S |
| Rds On - Drain-Source Resistance | 850 mOhms |
| Rise Time | 23 ns |
| Fall Time | 19 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 125 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-263-3 |
| Length | 10.67 mm |
| Width | 9.65 mm |
| Height | 4.83 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | IRF |
| Packaging | Tube |
| Brand | Vishay / Siliconix |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 10 V |
| Vgs Th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 38 nC |
| Technology | Si |
| Id - Continuous Drain Current | 8 A |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Typical Turn-Off Delay Time | 26 ns |
| Typical Turn-On Delay Time | 11 ns |
| Factory Pack Quantity | 1000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.050717 oz |
