IRF9Z34PBF
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IRF9Z34PBF , Vishay / Siliconix

Fabricant: Vishay / Siliconix
No de pièce du fabricant: IRF9Z34PBF
Paquet: TO-220AB-3
RoHS:
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Description:
MOSFET P-CH -60V HEXFET MOSFET
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Spécifications techniques du produit
Product Attribute Attribute Value
Manufacturer Vishay
Product Category MOSFET
RoHS
Forward Transconductance - Min 5.9 S
Rds On - Drain-Source Resistance 140 mOhms
Rise Time 120 ns
Fall Time 58 ns
Mounting Style Through Hole
Pd - Power Dissipation 88 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case TO-220AB-3
Length 10.41 mm
Width 4.7 mm
Height 15.49 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Channel Mode Enhancement
Series IRF9Z
Packaging Tube
Brand Vishay / Siliconix
Configuration Single
Transistor Polarity P-Channel
Transistor Type 1 P-Channel
Vgs - Gate-Source Voltage 10 V
Vgs Th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 34 nC
Technology Si
Id - Continuous Drain Current 18 A
Vds - Drain-Source Breakdown Voltage 60 V
Typical Turn-Off Delay Time 20 ns
Typical Turn-On Delay Time 18 ns
Factory Pack Quantity 50
Subcategory MOSFETs
Unit Weight 0.211644 oz
Références croisées
757061
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=757061&N=
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