IHG25N50E-GE3
Payment:
Delivery:

SIHG25N50E-GE3 , Vishay / Siliconix

Fabricant: Vishay / Siliconix
No de pièce du fabricant: SIHG25N50E-GE3
Paquet: TO-247AC-3
RoHS:
Fiche technique:

PDF For SIHG25N50E-GE3

ECAD:
Description:
MOSFET 500V Vds 30V Vgs TO-247AC
Demande de devis In Stock: 438938
Conseils chaleureux: veuillez remplir le formulaire ci-dessous et nous vous contacterons dans les plus brefs délais.
*Quantité:
*Votre Nom:
*Adresse e-mail:
Téléphone:
Prix ​​cible:
Remarque:
envoyer une demande
  • Product Details
  • Shopping Guide
  • FAQs
Spécifications techniques du produit
Product Attribute Attribute Value
Manufacturer Vishay
Product Category MOSFET
RoHS
Rds On - Drain-Source Resistance 145 mOhms
Rise Time 36 ns
Fall Time 29 ns
Mounting Style Through Hole
Pd - Power Dissipation 250 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case TO-247AC-3
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series E
Packaging Tube
Brand Vishay / Siliconix
Configuration Single
Transistor Polarity N-Channel
Vgs - Gate-Source Voltage 30 V
Vgs Th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 57 nC
Technology Si
Id - Continuous Drain Current 26 A
Vds - Drain-Source Breakdown Voltage 500 V
Typical Turn-Off Delay Time 57 ns
Typical Turn-On Delay Time 19 ns
Factory Pack Quantity 500
Subcategory MOSFETs
Références croisées
814949
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=814949&N=
$