Spécifications techniques du produit
| Product Attribute | Attribute Value |
|---|---|
| Class | - |
| Manufacturer | Cree, Inc. |
| Product Category | RF JFET Transistors |
| RoHS |
|
| Product | GaN HEMT |
| Forward Transconductance - Min | - |
| Rds On - Drain-Source Resistance | - |
| Rise Time | - |
| Maximum Drain Gate Voltage | - |
| Fall Time | - |
| p1db - Compression Point | - |
| Operating Frequency | 1.2 GHz to 1.4 GHz |
| Operating Temperature Range | - |
| Mounting Style | Screw Mount |
| Pd - Power Dissipation | - |
| Output Power | 330 W |
| Product Type | RF JFET Transistors |
| Package / Case | 440162 |
| Length | 20.45 mm |
| Width | 10.29 mm |
| Height | 3.78 mm |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 130 C |
| Application | - |
| NF - Noise Figure | - |
| Gain | 18.6 dB |
| Packaging | Tube |
| Brand | Wolfspeed / Cree |
| Configuration | Single |
| Development Kit | CGHV14250F-TB |
| Gate-Source Cutoff Voltage | - |
| Transistor Polarity | N-Channel |
| Transistor Type | HEMT |
| Vgs - Gate-Source Breakdown Voltage | - 10 V to 2 V |
| Vgs Th - Gate-Source Threshold Voltage | - 3 V |
| Technology | GaN |
| Id - Continuous Drain Current | 18 A |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Typical Turn-Off Delay Time | - |
| Factory Pack Quantity | 50 |
| Subcategory | Transistors |
